4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK6020DPK-00#T0
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RFQ
15,140
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Renesas Electronics America MOSFET N-CH 600V 32A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel - 600V 32A (Ta) 175 mOhm @ 16A, 10V - 121nC @ 10V 5150pF @ 25V 10V ±30V
STW72N60DM2AG
Per Unit
$5.88
RFQ
76,300
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STMicroelectronics MOSFET N-CH 600V 66A Automotive, AEC-Q101, MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 446W (Tc) N-Channel - 600V 66A (Tc) 42 mOhm @ 33A, 10V 5V @ 250µA 121nC @ 10V 5508pF @ 100V 10V ±25V
IPZA60R037P7XKSA1
Per Unit
$6.48
RFQ
52,540
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Infineon Technologies MOSFET TO247-4 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 PG-TO247-4 255W (Tc) N-Channel - 600V 76A (Tc) 37 mOhm @ 29.5A, 10V 4V @ 1.48mA 121nC @ 10V 5243pF @ 400V 10V ±20V
STW70N60DM2
Per Unit
$6.32
RFQ
26,880
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STMicroelectronics MOSFET N-CH 600V 66A MDmesh™ DM2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 446W (Tc) N-Channel - 600V 66A (Tc) 42 mOhm @ 33A, 10V 5V @ 250µA 121nC @ 10V 5508pF @ 100V 10V ±25V
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