5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFPS29N60LPBF
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RFQ
31,000
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Vishay Siliconix MOSFET N-CH 600V 29A SUPER247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-274AA SUPER-247 (TO-274AA) 480W (Tc) N-Channel 600V 29A (Tc) 210 mOhm @ 17A, 10V 5V @ 250µA 220nC @ 10V 6160pF @ 25V 10V ±30V
IRFPS30N60KPBF
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RFQ
47,660
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Vishay Siliconix MOSFET N-CH 600V 30A SUPER247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-274AA SUPER-247 (TO-274AA) 450W (Tc) N-Channel 600V 30A (Tc) 190 mOhm @ 18A, 10V 5V @ 250µA 220nC @ 10V 5870pF @ 25V 10V ±30V
SIHG47N60E-E3
Per Unit
$5.60
RFQ
62,500
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Vishay Siliconix MOSFET N-CH 600V 47A TO247AC - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 357W (Tc) N-Channel 600V 47A (Tc) 64 mOhm @ 24A, 10V 4V @ 250µA 220nC @ 10V 9620pF @ 100V 10V ±30V
SIHW47N60E-GE3
Per Unit
$5.60
RFQ
46,280
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Vishay Siliconix MOSFET N-CH 600V 47A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-247AD 357W (Tc) N-Channel 600V 47A (Tc) 64 mOhm @ 24A, 10V 4V @ 250µA 220nC @ 10V 9620pF @ 100V 10V ±20V
SIHG47N60E-GE3
Per Unit
$5.60
RFQ
18,400
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 47A TO247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 357W (Tc) N-Channel 600V 47A (Tc) 64 mOhm @ 24A, 10V 4V @ 250µA 220nC @ 10V 9620pF @ 100V 10V ±30V
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