Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STY80NM60N
Per Unit
$7.67
RFQ
32,500
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 74A MAX247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 MAX247™ 447W (Tc) N-Channel - 600V 74A (Tc) 35 mOhm @ 37A, 10V 4V @ 250µA 360nC @ 10V 10100pF @ 50V 10V ±25V
FCH041N60F
Per Unit
$5.29
RFQ
61,760
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N CH 600V 76A TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 595W (Tc) N-Channel - 600V 76A (Tc) 41 mOhm @ 38A, 10V 5V @ 250µA 360nC @ 10V 14365pF @ 100V 10V ±20V
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