- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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12,420
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||||
|
GET PRICE |
39,040
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|
STMicroelectronics | MOSFET N-CH 600V 8A TO-220 | MDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | - | 600V | 8A (Tc) | 1 Ohm @ 2.5A, 10V | 5V @ 250µA | 18nC @ 10V | 380pF @ 25V | 10V | ±30V | |||
|
GET PRICE |
42,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 2.5A (Ta) | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V |