- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
14 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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19,860
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|
Vishay Siliconix | MOSFET N-CH 600V 3.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 40W (Tc) | N-Channel | 600V | 3.5A (Tc) | 1.2 Ohm @ 2.1A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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71,040
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 130W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
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16,520
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|
STMicroelectronics | MOSFET N-CH 600V 20A TO-220FP | FDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 45W (Tc) | N-Channel | 600V | 20A (Tc) | 290 mOhm @ 10A, 10V | 5V @ 250µA | 37nC @ 10V | 1300pF @ 25V | 10V | ±30V | ||
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45,060
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.1W (Ta), 130W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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24,740
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|
Vishay Siliconix | MOSFET N-CH 600V 6.8A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | 600V | 6.8A (Tc) | 1.2 Ohm @ 4.1A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
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58,540
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 130W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
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55,120
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
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24,540
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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16,200
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|
STMicroelectronics | MOSFET N-CH 600V 20A TO-247 | FDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 214W (Tc) | N-Channel | 600V | 20A (Tc) | 290 mOhm @ 10A, 10V | 5V @ 250µA | 37nC @ 10V | 1300pF @ 25V | 10V | ±30V | |||
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66,940
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|
STMicroelectronics | MOSFET N-CH 600V 20A TO-220 | FDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 192W (Tc) | N-Channel | 600V | 20A (Tc) | 290 mOhm @ 10A, 10V | 5V @ 250µA | 37nC @ 10V | 1300pF @ 25V | 10V | ±30V | |||
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32,780
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|
Vishay Siliconix | MOSFET N-CH 600V 6.8A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | 600V | 6.8A (Tc) | 1.2 Ohm @ 4.1A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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36,900
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V TO220SIS | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | 1300pF @ 25V | 10V | ±30V | |||
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28,240
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 130W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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22,400
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|
Vishay Siliconix | MOSFET N-CH 600V 3.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 40W (Tc) | N-Channel | 600V | 3.5A (Tc) | 1.2 Ohm @ 2.1A, 10V | 4V @ 250µA | 60nC @ 10V | 1300pF @ 25V | 10V | ±20V |