Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQU3N60CTU
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RFQ
57,160
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 2.4A IPAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 50W (Tc) N-Channel - 600V 2.4A (Tc) 3.4 Ohm @ 1.2A, 10V 4V @ 250µA 14nC @ 10V 565pF @ 25V 10V ±30V
FQP3N60C
Per Unit
$0.68
RFQ
59,880
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ON Semiconductor MOSFET N-CH 600V 3A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 75W (Tc) N-Channel - 600V 3A (Tc) 3.4 Ohm @ 1.5A, 10V 4V @ 250µA 14nC @ 10V 565pF @ 25V 10V ±30V
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