- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
68,800
One step to sell excess stocks.Or submit Qty to get quotes
|
Renesas Electronics America | MOSFET N-CH 600V 10A LDPAK | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | - | 600V | 10A (Ta) | 1.1 Ohm @ 5A, 10V | - | 28nC @ 10V | 1050pF @ 25V | 10V | ±30V | ||
|
|
54,200
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 7.5A (Ta) | 1 Ohm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V |
