Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK6020DPK-00#T0
GET PRICE
RFQ
15,140
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CH 600V 32A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel - 600V 32A (Ta) 175 mOhm @ 16A, 10V - 121nC @ 10V 5150pF @ 25V 10V ±30V
IXFH42N60P3
Per Unit
$3.99
RFQ
25,000
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 42A TO247 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 830W (Tc) N-Channel - 600V 42A (Tc) 185 mOhm @ 500mA, 10V 5V @ 4mA 78nC @ 10V 5150pF @ 25V 10V ±30V
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