- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
8 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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42,520
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|
Vishay Siliconix | MOSFET P-CH 200V 3.6A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | 200V | 3.6A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | 340pF @ 25V | 10V | ±20V | ||
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GET PRICE |
59,040
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|
ON Semiconductor | MOSFET N-CH 200V 4.6A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 50W (Tc) | N-Channel | 200V | 4.6A (Tc) | 800 mOhm @ 2.4A, 10V | 4V @ 250µA | 18nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
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25,920
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|
Vishay Siliconix | MOSFET P-CH 200V 1.9A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | P-Channel | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | ||
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GET PRICE |
37,380
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|
Vishay Siliconix | MOSFET N-CH 200V 2.6A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | 200V | 2.6A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | ||
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43,620
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|
Vishay Siliconix | MOSFET P-CH 200V 1.9A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | P-Channel | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
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13,920
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|
Vishay Siliconix | MOSFET P-CH 200V 3.6A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | 200V | 3.6A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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75,860
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|
Vishay Siliconix | MOSFET N-CH 200V 2.6A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | 200V | 2.6A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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27,480
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|
Vishay Siliconix | MOSFET N-CH 200V 4.8A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | 200V | 4.8A (Tc) | 800 mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V |