3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSM3J321T(TE85L,F)
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RFQ
51,900
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 5.2A TSM U-MOSV Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 5.2A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 1.5V, 4.5V ±8V
SSM3J321T(TE85L,F)
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RFQ
79,660
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 5.2A TSM U-MOSV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 5.2A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 1.5V, 4.5V ±8V
SSM3J321T(TE85L,F)
GET PRICE
RFQ
72,340
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5.2A TSM U-MOSV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 5.2A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 1.5V, 4.5V ±8V
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