Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM70N600CP ROG
Per Unit
$0.43
RFQ
35,260
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 700V 8A TO252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 83W (Tc) N-Channel 700V 8A (Tc) 600 mOhm @ 4A, 10V 4V @ 250µA 12.6nC @ 10V 743pF @ 100V 10V ±30V
TSM60N600CP ROG
Per Unit
$0.41
RFQ
49,060
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 8A TO252 - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 83W (Tc) N-Channel 600V 8A (Tc) 600 mOhm @ 4A, 10V 4V @ 250µA 13nC @ 10V 743pF @ 100V 10V ±30V
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