- Manufacture :
- Series :
- Packaging :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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61,440
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|
Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 117W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | 1952pF @ 400V | 10V | ±20V | |||
|
38,800
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Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 117W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | 1952pF @ 400V | 10V | ±20V | ||||
|
31,080
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|
Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ P7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 117W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | 1952pF @ 400V | 10V | ±20V | ||||
|
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28,260
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|
ON Semiconductor | MOSFET N-CH 200V 31A D2PAK | QFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 5V @ 250µA | 78nC @ 10V | 3100pF @ 25V | 10V | ±30V | |||
|
78,200
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|
ON Semiconductor | MOSFET N-CH 200V 31A D2PAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 5V @ 250µA | 78nC @ 10V | 3100pF @ 25V | 10V | ±30V | ||||
|
33,240
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|
ON Semiconductor | MOSFET N-CH 200V 31A D2PAK | QFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 5V @ 250µA | 78nC @ 10V | 3100pF @ 25V | 10V | ±30V | ||||
|
GET PRICE |
55,220
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|
ON Semiconductor | MOSFET N-CH 200V 31A D2PAK | QFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 2V @ 250µA | 72nC @ 5V | 3900pF @ 25V | 5V, 10V | ±20V | |||
|
75,140
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|
ON Semiconductor | MOSFET N-CH 200V 31A D2PAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 2V @ 250µA | 72nC @ 5V | 3900pF @ 25V | 5V, 10V | ±20V | ||||
|
45,040
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|
ON Semiconductor | MOSFET N-CH 200V 31A D2PAK | QFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 2V @ 250µA | 72nC @ 5V | 3900pF @ 25V | 5V, 10V | ±20V |