- Series :
- Part Status :
- Packaging :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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28,480
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|
Global Power Technologies Group | MOSFET N-CH 600V 2A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 52.1W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9nC @ 10V | 360pF @ 25V | 10V | ±30V | ||
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12,640
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 2A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 74W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.4 Ohm @ 1A, 10V | 4.5V @ 250µA | 11.4nC @ 10V | 325pF @ 25V | 10V | ±30V | ||
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21,440
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|
IXYS | MOSFET N-CH 650V 2A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 55W (Tc) | N-Channel | - | 650V | 2A (Tc) | 2.3 Ohm @ 1A, 10V | 5V @ 250µA | 4.3nC @ 10V | 180pF @ 25V | 10V | ±30V | |||
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41,840
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|
STMicroelectronics | MOSFET N-CH 950V 2A TO220 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 45W (Tc) | N-Channel | - | 950V | 2A (Tc) | 5 Ohm @ 1A, 10V | 5V @ 100µA | 10nC @ 10V | 105pF @ 100V | 10V | 30V | |||
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33,740
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|
STMicroelectronics | MOSFET N-CH 800V 2A TO220 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 45W (Tc) | N-Channel | - | 800V | 2A (Tc) | 4.5 Ohm @ 1A, 10V | 5V @ 100µA | 3nC @ 10V | 95pF @ 100V | 10V | 30V | |||
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61,980
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|
STMicroelectronics | MOSFET N-CHANNEL 800V 2A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 45W (Tc) | N-Channel | - | 800V | 2A (Tc) | 3.25 Ohm @ 1A, 10V | 5V @ 100µA | 2.63nC @ 10V | 102pF @ 100V | 10V | ±30V |
