Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPC8133,LQ(S
Per Unit
$0.26
RFQ
14,680
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET P-CH 40V 9A 8SOP U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 1W (Ta) P-Channel - 40V 9A (Ta) 15 mOhm @ 4.5A, 10V 2V @ 500µA 64nC @ 10V 2900pF @ 10V 4.5V, 10V +20V, -25V
TPC8129,LQ(S
Per Unit
$0.16
RFQ
21,340
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET P-CH 30V 9A 8SOP U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 1W (Ta) P-Channel - 30V 9A (Ta) 22 mOhm @ 4.5A, 10V 2V @ 200µA 39nC @ 10V 1650pF @ 10V 4.5V, 10V +20V, -25V
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