Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
10 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIE836DF-T1-E3
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RFQ
52,300
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Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SIE836DF-T1-GE3
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RFQ
48,880
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Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SIE836DF-T1-GE3
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RFQ
31,040
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Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SIE836DF-T1-GE3
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RFQ
33,000
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Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SUD19P06-60-E3
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RFQ
75,260
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Vishay Siliconix MOSFET P-CH 60V 18.3A TO252 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.3W (Ta), 38.5W (Tc) P-Channel - 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 4.5V, 10V ±20V
SUD19P06-60-E3
Per Unit
$0.70
RFQ
61,940
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Vishay Siliconix MOSFET P-CH 60V 18.3A TO252 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.3W (Ta), 38.5W (Tc) P-Channel - 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 4.5V, 10V ±20V
SUD19P06-60-E3
Per Unit
$0.27
RFQ
72,000
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Vishay Siliconix MOSFET P-CH 60V 18.3A TO252 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.3W (Ta), 38.5W (Tc) P-Channel - 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 4.5V, 10V ±20V
SUD19P06-60-GE3
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RFQ
20,020
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Vishay Siliconix MOSFET P-CH 60V 18.3A TO-252 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.3W (Ta), 38.5W (Tc) P-Channel - 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 4.5V, 10V ±20V
SUD19P06-60-GE3
Per Unit
$0.70
RFQ
50,400
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Vishay Siliconix MOSFET P-CH 60V 18.3A TO-252 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.3W (Ta), 38.5W (Tc) P-Channel - 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 4.5V, 10V ±20V
SUD19P06-60-GE3
Per Unit
$0.27
RFQ
39,900
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Vishay Siliconix MOSFET P-CH 60V 18.3A TO-252 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.3W (Ta), 38.5W (Tc) P-Channel - 60V 18.3A (Tc) 60 mOhm @ 10A, 10V 3V @ 250µA 40nC @ 10V 1710pF @ 25V 4.5V, 10V ±20V
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