- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
23 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
66,880
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|
Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | ||
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GET PRICE |
74,200
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|
ON Semiconductor | MOSFET N-CH 60V 97A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 60V | 97A (Tc) | 7.8 mOhm @ 20A, 10V | 4V @ 250µA | 55nC @ 10V | 3200pF @ 25V | 10V | ±20V | ||
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GET PRICE |
69,360
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|
Infineon Technologies | MOSFET N-CH 75V 97A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 75V | 97A (Tc) | 8.8 mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | 10V | ±20V | ||
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GET PRICE |
39,980
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|
NXP USA Inc. | MOSFET N-CH 25V 97A LFPAK | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 64W (Tc) | N-Channel | - | 25V | 97A (Tc) | 3.9 mOhm @ 20A, 10V | 1.95V @ 1mA | 21.6nC @ 10V | 1585pF @ 12V | 4.5V, 10V | ±20V | ||
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|
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GET PRICE |
39,620
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|
NXP USA Inc. | MOSFET N-CH 25V 97A LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 64W (Tc) | N-Channel | - | 25V | 97A (Tc) | 3.9 mOhm @ 20A, 10V | 1.95V @ 1mA | 21.6nC @ 10V | 1585pF @ 12V | 4.5V, 10V | ±20V | ||
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|
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GET PRICE |
26,040
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|
NXP USA Inc. | MOSFET N-CH 25V 97A LFPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 64W (Tc) | N-Channel | - | 25V | 97A (Tc) | 3.9 mOhm @ 20A, 10V | 1.95V @ 1mA | 21.6nC @ 10V | 1585pF @ 12V | 4.5V, 10V | ±20V | ||
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|
|
GET PRICE |
12,000
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|
Infineon Technologies | MOSFET N-CH 75V 97A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 75V | 97A (Tc) | 8.8 mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | 10V | ±20V | ||
|
|
GET PRICE |
16,620
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|
Infineon Technologies | MOSFET N-CH 75V 97A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 190W (Tc) | N-Channel | - | 75V | 97A (Tc) | 8.8 mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | 10V | ±20V | ||
|
|
GET PRICE |
31,640
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|
Infineon Technologies | MOSFET N-CH 75V 97A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | - | 75V | 97A (Tc) | 8.8 mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | 10V | ±20V | ||
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|
|
GET PRICE |
56,440
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|
Infineon Technologies | MOSFET N-CH 75V 97A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | - | 75V | 97A (Tc) | 8.8 mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | 10V | ±20V | ||
|
|
61,640
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|
Microsemi Corporation | MOSFET N-CH 200V 97A SOT-227 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 450W (Tc) | N-Channel | - | 200V | 97A (Tc) | 22 mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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|
|
73,060
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|
Microsemi Corporation | MOSFET N-CH 200V 97A SOT-227 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 450W (Tc) | N-Channel | - | 200V | 97A (Tc) | 22 mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
|
|
23,180
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|
Infineon Technologies | MOSFET N-CH 100V 97A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
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|
|
12,880
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|
Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
|
|
GET PRICE |
12,100
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|
Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | ||
|
|
|
61,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
|
|
49,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
|
64,740
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|
Microsemi Corporation | MOSFET N-CH 650V 97A TO-264 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 862W (Tc) | N-Channel | - | 650V | 97A (Tc) | 41 mOhm @ 48.5A, 10V | 3.5V @ 2.96mA | 300nC @ 10V | 7650pF @ 25V | 10V | ±20V | |||
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|
|
16,080
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CH 60V 50A TO252 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 136W (Tc) | N-Channel | - | 60V | 97A (Tc) | 6.3 mOhm @ 25A, 10V | 2.5V @ 250µA | 125nC @ 10V | 6060pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
|
24,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 221W (Tc) | N-Channel | - | 100V | 97A (Tc) | 8.6 mOhm @ 58A, 10V | 4V @ 150µA | 116nC @ 10V | 4476pF @ 50V | 10V | ±20V | |||
|
|
|
58,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
|
|
66,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 97A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
|
|
69,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V |
