- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
28 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
59,200
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|
Infineon Technologies | MOSFET N CH 250V 9.3A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 250V | 9.3A (Tc) | 345 mOhm @ 5.6A, 10V | 5V @ 50µA | 20nC @ 10V | 705pF @ 25V | 10V | ±20V | ||
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GET PRICE |
36,300
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||
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GET PRICE |
57,420
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|
Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | ||
|
|
GET PRICE |
12,780
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|
ON Semiconductor | MOSFET N-CH 80V 9.3A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 40W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 210 mOhm @ 4.65A, 10V | 2V @ 250µA | 6.1nC @ 5V | 280pF @ 25V | 5V, 10V | ±20V | ||
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GET PRICE |
64,720
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|
ON Semiconductor | MOSFET N-CH 80V 9.3A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 40W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 210 mOhm @ 4.65A, 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | 10V | ±25V | ||
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|
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GET PRICE |
23,080
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|
ON Semiconductor | MOSFET N-CH 80V 9.3A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 40W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 210 mOhm @ 4.65A, 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | 10V | ±25V | ||
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|
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GET PRICE |
61,200
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|
ON Semiconductor | MOSFET N-CH 80V 9.3A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 40W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 210 mOhm @ 4.65A, 10V | 2V @ 250µA | 6.1nC @ 5V | 280pF @ 25V | 5V, 10V | ±20V | ||
|
|
GET PRICE |
60,200
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|
Vishay Siliconix | MOSFET N-CH 300V 9.3A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 96W (Tc) | N-Channel | - | 300V | 9.3A (Tc) | 450 mOhm @ 5.6A, 10V | 4V @ 250µA | 33nC @ 10V | 920pF @ 25V | 10V | ±30V | ||
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|
37,560
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|
Infineon Technologies | MOSFET N CH 250V 9.3A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 100W (Tc) | N-Channel | - | 250V | 9.3A (Tc) | 345 mOhm @ 5.6A, 10V | 5V @ 50µA | 20nC @ 10V | 705pF @ 25V | 10V | ±20V | |||
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|
|
58,340
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|
Infineon Technologies | MOSFET N CH 250V 9.3A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 250V | 9.3A (Tc) | 345 mOhm @ 5.6A, 10V | 5V @ 50µA | 20nC @ 10V | 705pF @ 25V | 10V | ±20V | |||
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|
GET PRICE |
51,840
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|
ON Semiconductor | MOSFET N-CH 80V 9.3A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 40W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 210 mOhm @ 4.65A, 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | 10V | ±25V | ||
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|
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GET PRICE |
32,580
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|
ON Semiconductor | MOSFET N-CH 80V 9.3A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 40W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 210 mOhm @ 4.65A, 10V | 5V @ 250µA | 6.1nC @ 5V | 280pF @ 25V | 5V, 10V | ±20V | ||
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|
|
GET PRICE |
47,320
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|
Vishay Siliconix | MOSFET N-CH 300V 9.3A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 96W (Tc) | N-Channel | - | 300V | 9.3A (Tc) | 450 mOhm @ 5.6A, 10V | 4V @ 250µA | 33nC @ 10V | 920pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
14,940
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||
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|
|
GET PRICE |
19,640
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||
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|
|
GET PRICE |
50,820
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||
|
|
|
GET PRICE |
27,540
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||
|
|
|
GET PRICE |
47,060
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||
|
|
|
37,680
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|
Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | |||
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|
|
39,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
|
|
|
14,180
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
|
|
|
GET PRICE |
17,060
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|
Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | ||
|
|
|
56,400
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | |||
|
|
|
33,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | |||
|
|
46,260
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|
Infineon Technologies | MOSFET N-CH 200V 9.3A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | |||
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|
GET PRICE |
52,740
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|
Nexperia USA Inc. | MOSFET N-CH 100V 9.3A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 36W (Tc) | N-Channel | - | 100V | 9.3A (Tc) | 150 mOhm @ 5A, 10V | 2.1V @ 1mA | 7.4nC @ 5V | 695pF @ 25V | 5V | ±10V | ||
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|
|
41,100
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|
Nexperia USA Inc. | MOSFET N-CH 100V 9.3A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 36W (Tc) | N-Channel | - | 100V | 9.3A (Tc) | 150 mOhm @ 5A, 10V | 2.1V @ 1mA | 7.4nC @ 5V | 695pF @ 25V | 5V | ±10V | |||
|
|
|
61,360
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|
Nexperia USA Inc. | MOSFET N-CH 100V 9.3A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 36W (Tc) | N-Channel | - | 100V | 9.3A (Tc) | 150 mOhm @ 5A, 10V | 2.1V @ 1mA | 7.4nC @ 5V | 695pF @ 25V | 5V | ±10V |
