- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
43,320
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|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | ||
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30,480
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|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
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32,360
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
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GET PRICE |
54,700
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|
Vishay Siliconix | MOSFET P-CH 30V 19.2A 8-SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.9W (Ta), 5.9W (Tc) | P-Channel | - | 30V | 19.2A (Tc) | 8.8 mOhm @ 10A, 10V | 2.6V @ 250µA | 135nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±25V | ||
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38,160
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET P-CH 30V 19.2A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.9W (Ta), 5.9W (Tc) | P-Channel | - | 30V | 19.2A (Tc) | 8.8 mOhm @ 10A, 10V | 2.6V @ 250µA | 135nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±25V | |||
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62,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET P-CH 30V 19.2A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.9W (Ta), 5.9W (Tc) | P-Channel | - | 30V | 19.2A (Tc) | 8.8 mOhm @ 10A, 10V | 2.6V @ 250µA | 135nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±25V |
