- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
_SOT226%20Pkg.jpg)
|
|
GET PRICE |
37,600
One step to sell excess stocks.Or submit Qty to get quotes
|
NXP USA Inc. | MOSFET N-CH 108V 100A I2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 263W (Tc) | N-Channel | 108V | 100A (Tj) | 8.5 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | 5512pF @ 50V | 10V | ±20V | ||
|
|
59,960
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET N-CH 100V SIL3 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 294W (Tc) | N-Channel | 100V | 100A (Tj) | 7.8 mOhm @ 25A, 10V | 4V @ 1mA | 128nC @ 10V | 7110pF @ 50V | 10V | ±20V | |||
|
|
|
29,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET N-CH 100V 100A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 263W (Tc) | N-Channel | 100V | 100A (Tj) | 8.5 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | 5512pF @ 50V | 10V | ±20V | |||
|
|
|
79,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET N-CH 100V 100A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 263W (Tc) | N-Channel | 100V | 100A (Tj) | 8.5 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | 5512pF @ 50V | 10V | ±20V |
