Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
9 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD50R280CEAUMA1
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RFQ
58,040
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Infineon Technologies MOSFET N-CH 550V 18.1A TO252 CoolMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 119W (Tc) N-Channel 550V 18.1A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V
IPD50R280CEAUMA1
Per Unit
$0.85
RFQ
15,300
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Infineon Technologies MOSFET N-CH 550V 18.1A TO252 CoolMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 119W (Tc) N-Channel 550V 18.1A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V
IPD50R280CEAUMA1
Per Unit
$0.33
RFQ
22,080
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Infineon Technologies MOSFET N-CH 550V 18.1A TO252 CoolMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 119W (Tc) N-Channel 550V 18.1A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V
DMN2005UFG-13
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RFQ
72,240
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Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
DMN2005UFG-13
Per Unit
$0.40
RFQ
24,360
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Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
DMN2005UFG-13
Per Unit
$0.12
RFQ
68,660
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Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
DMN2005UFG-7
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RFQ
33,520
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Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
DMN2005UFG-7
Per Unit
$0.40
RFQ
60,480
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Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
DMN2005UFG-7
Per Unit
$0.12
RFQ
66,620
One step to sell excess stocks.Or submit Qty to get quotes
Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1.05W (Ta) N-Channel 20V 18.1A (Tc) 4.6 mOhm @ 13.5A, 4.5V 1.2V @ 250µA 164nC @ 10V 6495pF @ 10V 2.5V, 4.5V ±12V
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