- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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75,740
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Renesas Electronics America | MOSFET N-CH 40V 160A TO-263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7 | 1.8W (Ta), 220W (Tc) | N-Channel | 40V | 160A (Ta) | 2 mOhm @ 80A, 10V | 2.5V @ 250µA | 270nC @ 10V | 15750pF @ 25V | 4.5V, 10V | ±20V | ||
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59,080
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Nexperia USA Inc. | PSMN1R6-30MLH/SOT1210/MLFPAK | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 106W (Ta) | N-Channel | 30V | 160A (Ta) | 1.9 mOhm @ 25A, 10V | 2.2V @ 1mA | 41nC @ 10V | 2.369nF @ 15V | 4.5V, 10V | ±20V | |||
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13,920
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVIII-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220SM(W) | 375W (Tc) | N-Channel | 100V | 160A (Ta) | 2.4 mOhm @ 80A, 10V | 3.5V @ 1mA | 122nC @ 10V | 10100pF @ 10V | 6V, 10V | ±20V |
