- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
74,980
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET P-CH 20V 26.6A 8-SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3W (Ta), 6.6W (Tc) | P-Channel | - | 20V | 26.6A (Tc) | 6.2 mOhm @ 18A, 4.5V | 1.5V @ 250µA | 190nC @ 10V | 4600pF @ 10V | 2.5V, 4.5V | ±12V | ||
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22,980
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET P-CH 20V 26.6A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3W (Ta), 6.6W (Tc) | P-Channel | - | 20V | 26.6A (Tc) | 6.2 mOhm @ 18A, 4.5V | 1.5V @ 250µA | 190nC @ 10V | 4600pF @ 10V | 2.5V, 4.5V | ±12V | |||
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34,220
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET P-CH 20V 26.6A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3W (Ta), 6.6W (Tc) | P-Channel | - | 20V | 26.6A (Tc) | 6.2 mOhm @ 18A, 4.5V | 1.5V @ 250µA | 190nC @ 10V | 4600pF @ 10V | 2.5V, 4.5V | ±12V |
