- Packaging :
- Package / Case :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
42,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | 6190pF @ 15V | 4.5V, 10V | ±20V | ||
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|
29,920
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | 6190pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
77,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | 6190pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
GET PRICE |
12,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
69,880
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
|
35,860
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V |
