Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PH1875L,115
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RFQ
58,560
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 75V 45.8A LFPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 62.5W (Tc) N-Channel - 75V 45.8A (Tc) 16.5 mOhm @ 20A, 10V 2V @ 1mA 33.4nC @ 5V 2600pF @ 25V 4.5V, 10V ±15V
FCH47N60NF
Per Unit
$8.60
RFQ
37,900
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 45.8A TO-247 SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 368W (Tc) N-Channel - 600V 45.8A (Tc) 65 mOhm @ 23.5A, 10V 4V @ 250µA 157nC @ 10V 6120pF @ 100V 10V ±30V
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