6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHM12NQ20T,518
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RFQ
62,840
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NXP USA Inc. MOSFET N-CH 200V 14.4A 8HVSON TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel - 200V 14.4A (Tc) 130 mOhm @ 12A, 10V 4V @ 1mA 26nC @ 10V 1230pF @ 25V 5V, 10V ±20V
FQB14N30TM
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RFQ
41,000
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ON Semiconductor MOSFET N-CH 300V 14.4A D2PAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 147W (Tc) N-Channel - 300V 14.4A (Tc) 290 mOhm @ 7.2A, 10V 5V @ 250µA 40nC @ 10V 1360pF @ 25V 10V ±30V
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Per Unit
$218.47
RFQ
64,020
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Microsemi Corporation N CHANNEL MOSFET TO-257 RAD Military, MIL-PRF-19500/614 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-257-3 TO-257 2W (Ta), 75W (Tc) N-Channel - 100V 14.4A (Tc) 200 mOhm @ 14.4A, 12V 4V @ 1mA 40nC @ 12V - 12V ±20V
FQB14N15TM
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RFQ
24,380
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ON Semiconductor MOSFET N-CH 150V 14.4A D2PAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 104W (Tc) N-Channel - 150V 14.4A (Tc) 210 mOhm @ 7.2A, 10V 4V @ 250µA 23nC @ 10V 715pF @ 25V 10V ±25V
FQP14N15
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RFQ
42,760
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ON Semiconductor MOSFET N-CH 150V 14.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 104W (Tc) N-Channel - 150V 14.4A (Tc) 210 mOhm @ 7.2A, 10V 4V @ 250µA 23nC @ 10V 715pF @ 25V 10V ±25V
FQP14N30
Per Unit
$0.91
RFQ
46,500
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ON Semiconductor MOSFET N-CH 300V 14.4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 147W (Tc) N-Channel - 300V 14.4A (Tc) 290 mOhm @ 7.2A, 10V 5V @ 250µA 40nC @ 10V 1360pF @ 25V 10V ±30V
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