- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
33,840
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | ||
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75,980
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | |||
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79,860
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
GET PRICE |
36,440
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|
Diodes Incorporated | MOSFET N-CH 12V 1.41A 3DFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) | 500mW (Ta) | N-Channel | 12V | 1.41A (Ta) | 150 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.5nC @ 4.5V | 106pF @ 10V | 1.8V, 4.5V | ±6V | ||
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26,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET N-CH 12V 1.41A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) | 500mW (Ta) | N-Channel | 12V | 1.41A (Ta) | 150 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.5nC @ 4.5V | 106pF @ 10V | 1.8V, 4.5V | ±6V | |||
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32,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET N-CH 12V 1.41A 3DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) | 500mW (Ta) | N-Channel | 12V | 1.41A (Ta) | 150 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.5nC @ 4.5V | 106pF @ 10V | 1.8V, 4.5V | ±6V |
