- Manufacture :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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57,700
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|
Renesas Electronics America | MOSFET N-CH 100V MP-25/TO-220 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 1.5W (Ta), 56W (Tc) | N-Channel | 100V | 30A (Tc) | 50 mOhm @ 15A, 10V | - | 48nC @ 10V | 2300pF @ 10V | 4.5V, 10V | ±20V | ||
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43,340
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 200V 48A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 275W (Tc) | N-Channel | 200V | 48A (Tc) | 50 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3000pF @ 25V | 10V | ±20V |
