6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF3717
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RFQ
23,720
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Infineon Technologies MOSFET N-CH 20V 20A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 20A (Ta) 4.4 mOhm @ 20A, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V 4.5V, 10V ±20V
IRF3717TR
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RFQ
20,480
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Infineon Technologies MOSFET N-CH 20V 20A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 20A (Ta) 4.4 mOhm @ 20A, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V 4.5V, 10V ±20V
IRF3717PBF
Per Unit
$0.31
RFQ
57,540
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Infineon Technologies MOSFET N-CH 20V 20A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 20A (Ta) 4.4 mOhm @ 20A, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V 4.5V, 10V ±20V
IRF3717TRPBF
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RFQ
56,880
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Infineon Technologies MOSFET N-CH 20V 20A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 20A (Ta) 4.4 mOhm @ 20A, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V 4.5V, 10V ±20V
IRF3717TRPBF
Per Unit
$0.76
RFQ
63,060
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Infineon Technologies MOSFET N-CH 20V 20A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 20A (Ta) 4.4 mOhm @ 20A, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V 4.5V, 10V ±20V
IRF3717TRPBF
Per Unit
$0.29
RFQ
77,040
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Infineon Technologies MOSFET N-CH 20V 20A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 20A (Ta) 4.4 mOhm @ 20A, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V 4.5V, 10V ±20V
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