- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
75,260
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EPC | TRANS GAN 100V 3MOHM BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 100V | 60A (Ta) | 3.2 mOhm @ 25A, 5V | 2.5V @ 12mA | - | 1500pF @ 50V | 5V | +6V, -4V | ||
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20,760
One step to sell excess stocks.Or submit Qty to get quotes
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EPC | TRANS GAN 100V 3MOHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 100V | 60A (Ta) | 3.2 mOhm @ 25A, 5V | 2.5V @ 12mA | - | 1500pF @ 50V | 5V | +6V, -4V | |||
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65,580
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | TRANS GAN 100V 3MOHM BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | 100V | 60A (Ta) | 3.2 mOhm @ 25A, 5V | 2.5V @ 12mA | - | 1500pF @ 50V | 5V | +6V, -4V |
