4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLU024N
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RFQ
22,360
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Infineon Technologies MOSFET N-CH 55V 17A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
AUIRLR024N
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RFQ
23,600
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Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
IRLU024NPBF
Per Unit
$0.56
RFQ
54,400
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Infineon Technologies MOSFET N-CH 55V 17A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
IRLR024NPBF
Per Unit
$0.48
RFQ
28,920
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
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