- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
27,600
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A UFM | U-MOSIV | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 38 mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | 1484pF @ 10V | 1.5V, 4V | ±8V | ||
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71,860
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A UFM | U-MOSIV | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 38 mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | 1484pF @ 10V | 1.5V, 4V | ±8V | |||
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61,220
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A UFM | U-MOSIV | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 38 mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | 1484pF @ 10V | 1.5V, 4V | ±8V |
