Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BUK754R7-60E,127
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RFQ
71,140
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NXP USA Inc. MOSFET N-CH 60V 100A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 234W (Tc) N-Channel 60V 100A (Tc) 4.6 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 10V ±20V
PHD110NQ03LT,118
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RFQ
63,620
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NXP USA Inc. MOSFET N-CH 25V 75A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 115W (Tc) N-Channel 25V 75A (Tc) 4.6 mOhm @ 25A, 10V 2V @ 1mA 26.7nC @ 5V 2200pF @ 25V 5V, 10V ±20V
BUK9505-30A,127
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RFQ
23,800
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NXP USA Inc. MOSFET N-CH 30V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel 30V 75A (Tc) 4.6 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 4.5V, 10V ±10V
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