- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
29,060
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|
Global Power Technologies Group | MOSFET N-CH 800V 7A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 50W (Tc) | N-Channel | - | 800V | 7A (Tc) | 1.9 Ohm @ 3.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1410pF @ 25V | 10V | ±30V | ||
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GET PRICE |
56,500
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|
ON Semiconductor | MOSFET N-CH 800V 7A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 198W (Tc) | N-Channel | - | 800V | 7A (Tc) | 1.9 Ohm @ 3.5A, 10V | 5V @ 250µA | 35nC @ 10V | 1680pF @ 25V | 10V | ±30V | ||
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12,900
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|
ON Semiconductor | MOSFET N-CH 800V 7A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 198W (Tc) | N-Channel | - | 800V | 7A (Tc) | 1.9 Ohm @ 3.5A, 10V | 5V @ 250µA | 35nC @ 10V | 1680pF @ 25V | 10V | ±30V |
