- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
17 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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25,780
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | 3.1W (Ta), 36W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.4V @ 250µA | 50nC @ 10V | 2940pF @ 15V | 4.5V, 10V | ±20V | ||
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22,560
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|
Infineon Technologies | MOSFET N-CH 30V 20A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
46,900
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|
Infineon Technologies | MOSFET N-CH 30V 20A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
74,720
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|
Infineon Technologies | MOSFET N-CH 30V 20A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | ||
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GET PRICE |
67,620
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|
Vishay Siliconix | MOSFET N-CH 20V 50A DPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 8.3W (Ta), 136W (Tc) | N-Channel | - | 20V | 50A (Tc) | 4.3 mOhm @ 20A, 10V | 3V @ 250µA | 60nC @ 4.5V | 5000pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
69,380
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|
Vishay Siliconix | MOSFET N-CH 20V 50A DPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 8.3W (Ta), 136W (Tc) | N-Channel | - | 20V | 50A (Tc) | 4.3 mOhm @ 20A, 10V | 3V @ 250µA | 60nC @ 4.5V | 5000pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
51,560
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|
Vishay Siliconix | MOSFET N-CH 20V 50A DPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 8.3W (Ta), 136W (Tc) | N-Channel | - | 20V | 50A (Tc) | 4.3 mOhm @ 20A, 10V | 3V @ 250µA | 60nC @ 4.5V | 5000pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
32,080
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 20A 8SOIC | SRFET™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 20A (Tc) | 4.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | 4463pF @ 15V | 4.5V, 10V | ±20V | ||
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|
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GET PRICE |
44,500
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 20A 8SOIC | SRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 20A (Tc) | 4.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | 4463pF @ 15V | 4.5V, 10V | ±20V | ||
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|
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GET PRICE |
42,080
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 20A 8SOIC | SRFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 20A (Tc) | 4.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | 4463pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
52,720
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 80V 16A TO263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 2.1W (Ta), 250W (Tc) | N-Channel | - | 80V | 16A (Ta), 105A (Tc) | 4.3 mOhm @ 20A, 10V | 3.3V @ 250µA | 100nC @ 10V | 5154pF @ 40V | 6V, 10V | ±20V | |||
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52,760
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 80V 15A TO262 | AlphaMOS | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 1.9W (Ta), 250W (Tc) | N-Channel | - | 80V | 15A (Ta), 105A (Tc) | 4.3 mOhm @ 20A, 10V | 3.3V @ 250µA | 100nC @ 10V | 5154pF @ 40V | 6V, 10V | ±20V | |||
|
|
48,160
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|
Renesas Electronics America | MOSFET N-CH 30V 40A 2WPACK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 40W (Tc) | N-Channel | - | 30V | 40A (Ta) | 4.3 mOhm @ 20A, 10V | - | 21nC @ 4.5V | 3270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
51,380
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 20A 8DFN | - | Last Time Buy | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (3x3) | 3.1W (Ta), 36W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.4V @ 250µA | 50nC @ 10V | 2940pF @ 15V | 4.5V, 10V | ±20V | |||
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GET PRICE |
50,160
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
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|
|
18,160
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
12,900
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V |
