Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF7N80
GET PRICE
RFQ
76,360
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 3.8A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 56W (Tc) N-Channel 800V 3.8A (Tc) 1.5 Ohm @ 1.9A, 10V 5V @ 250µA 52nC @ 10V 1850pF @ 25V 10V ±30V
IRFI830G
Per Unit
$1.81
RFQ
69,060
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 500V 3.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel 500V 3.1A (Tc) 1.5 Ohm @ 1.9A, 10V 4V @ 250µA 38nC @ 10V 610pF @ 25V 10V ±20V
IRFI830GPBF
Per Unit
$1.03
RFQ
75,100
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 500V 3.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel 500V 3.1A (Tc) 1.5 Ohm @ 1.9A, 10V 4V @ 250µA 38nC @ 10V 610pF @ 25V 10V ±20V
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