Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFIBE30GPBF
Per Unit
$1.56
RFQ
43,100
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 800V 2.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel 800V 2.1A (Tc) 3 Ohm @ 1.3A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFIBE30G
GET PRICE
RFQ
60,160
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 800V 2.1A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel 800V 2.1A (Tc) 3 Ohm @ 1.3A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFI820G
Per Unit
$1.72
RFQ
13,980
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 500V 2.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 500V 2.1A (Tc) 3 Ohm @ 1.3A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
IRFI820GPBF
Per Unit
$1.60
RFQ
23,940
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 500V 2.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 500V 2.1A (Tc) 3 Ohm @ 1.3A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
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