4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTP20N65XM
Per Unit
$3.18
RFQ
65,400
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 9A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 63W (Tc) N-Channel 650V 9A (Tc) 210 mOhm @ 10A, 10V 5.5V @ 250µA 35nC @ 10V 1390pF @ 25V 10V ±30V
IXTP20N65X
Per Unit
$3.13
RFQ
14,560
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 20A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 320W (Tc) N-Channel 650V 20A (Tc) 210 mOhm @ 10A, 10V 5.5V @ 250µA 35nC @ 10V 1390pF @ 25V 10V ±30V
IXTH20N65X
Per Unit
$4.05
RFQ
36,160
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 20A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 320W (Tc) N-Channel 650V 20A (Tc) 210 mOhm @ 10A, 10V 5.5V @ 250µA 35nC @ 10V 1390pF @ 25V 10V ±30V
IXTA20N65X
Per Unit
$3.99
RFQ
75,200
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 20A TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 320W (Tc) N-Channel 650V 20A (Tc) 210 mOhm @ 10A, 10V 5.5V @ 250µA 35nC @ 10V 1390pF @ 25V 10V ±30V
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