- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
63,800
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | ||
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79,300
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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16,240
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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GET PRICE |
43,860
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | ||
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69,680
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|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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29,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V |
