Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW50NB20
GET PRICE
RFQ
39,080
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 200V 50A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 280W (Tc) N-Channel 200V 50A (Tc) 55 mOhm @ 25A, 10V 5V @ 250µA 115nC @ 10V 3400pF @ 25V 10V ±30V
IRFP150
GET PRICE
RFQ
67,780
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Vishay Siliconix MOSFET N-CH 100V 41A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 230W (Tc) N-Channel 100V 41A (Tc) 55 mOhm @ 25A, 10V 4V @ 250µA 140nC @ 10V 2800pF @ 25V 10V ±20V
IRFP150PBF
Per Unit
$2.03
RFQ
44,280
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 100V 41A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 230W (Tc) N-Channel 100V 41A (Tc) 55 mOhm @ 25A, 10V 4V @ 250µA 140nC @ 10V 2800pF @ 25V 10V ±20V
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