10 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AUIRF5210S
GET PRICE
RFQ
24,840
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRRPBF
Per Unit
$0.64
RFQ
12,680
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
GET PRICE
RFQ
19,320
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
Per Unit
$1.96
RFQ
30,660
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
Per Unit
$1.01
RFQ
57,580
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210SPBF
Per Unit
$1.33
RFQ
77,220
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
GET PRICE
RFQ
49,000
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
Per Unit
$1.31
RFQ
71,460
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
Per Unit
$0.64
RFQ
30,780
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210LPBF
Per Unit
$1.53
RFQ
49,840
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 100V 38A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
Page 1 / 1