Package / Case :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPZ60R037P7XKSA1
Per Unit
$6.28
RFQ
13,440
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 650V 76A TO247-4 CoolMOS™ P7 Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 PG-TO247-4 255W (Tc) N-Channel - 650V 76A (Tc) 37 mOhm @ 29.5A, 10V 4V @ 1.48mA 121nC @ 10V 5243pF @ 400V 10V ±20V
IPW60R037P7XKSA1
Per Unit
$6.02
RFQ
29,160
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 650V 76A TO247-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 255W (Tc) N-Channel - 650V 76A (Tc) 37 mOhm @ 29.5A, 10V 4V @ 1.48mA 121nC @ 10V 5243pF @ 400V 10V ±20V
IPZA60R037P7XKSA1
Per Unit
$6.48
RFQ
52,540
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET TO247-4 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 PG-TO247-4 255W (Tc) N-Channel - 600V 76A (Tc) 37 mOhm @ 29.5A, 10V 4V @ 1.48mA 121nC @ 10V 5243pF @ 400V 10V ±20V
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