Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
2SK1859-E
GET PRICE
RFQ
68,440
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Renesas Electronics America MOSFET N-CH 900V 6A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 60W (Tc) N-Channel 900V 6A (Ta) 3 Ohm @ 3A, 10V - - 980pF @ 10V 10V ±30V
2SK1341-E
GET PRICE
RFQ
47,880
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Renesas Electronics America MOSFET N-CH 900V 6A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) N-Channel 900V 6A (Ta) 3 Ohm @ 3A, 10V - - 980pF @ 10V 10V ±30V
NDUL09N150CG
Per Unit
$5.75
RFQ
32,560
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ON Semiconductor MOSFET N-CH 1500V 9A TO3PF-3 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) - TO-3P-3 Full Pack TO-3PF-3 3W (Ta), 78W (Tc) N-Channel 1500V 9A (Ta) 3 Ohm @ 3A, 10V 4V @ 1mA 114nC @ 10V 2025pF @ 30V 10V ±30V
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