Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT19M120J
Per Unit
$17.82
RFQ
79,060
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 1200V 19A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 545W (Tc) N-Channel - 1200V 19A (Tc) 530 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V 9670pF @ 25V 10V ±30V
APT28M120L
Per Unit
$12.94
RFQ
27,240
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 1200V 29A TO264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 1135W (Tc) N-Channel - 1200V 29A (Tc) 530 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V 9670pF @ 25V 10V ±30V
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