Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK5015DPM-00#T1
Per Unit
$2.38
RFQ
42,740
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CH 500V 25A TO3PFM - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3PFM, SC-93-3 TO-3PFM 60W (Tc) N-Channel 500V 25A (Ta) 240 mOhm @ 12.5A, 10V 66nC @ 10V 2600pF @ 25V 10V ±30V
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Per Unit
$1.68
RFQ
17,520
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CHANNEL 500V 25A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 150W (Ta) N-Channel 500V 25A (Ta) 240 mOhm @ 12.5A, 10V 66nC @ 10V 2600pF @ 25V 10V ±30V
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