Operating Temperature :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDP8870
Per Unit
$1.13
RFQ
21,620
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 30V 156A TO-220AB PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 30V 19A (Ta), 156A (Tc) 4.1 mOhm @ 35A, 10V 2.5V @ 250µA 132nC @ 10V 5200pF @ 15V 4.5V, 10V ±20V
Default Photo
Per Unit
$0.37
RFQ
57,760
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSVIII-H Active - MOSFET (Metal Oxide) 150°C Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 2.5W (Ta), 67W (Tc) N-Channel - 100V 92A (Ta), 70A (Tc) 4.1 mOhm @ 35A, 10V 2.5V @ 1mA 75nC @ 10V 6.3nF @ 50V 4.5V, 10V ±20V
FDP8870-F085
Per Unit
$1.37
RFQ
46,180
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 30V 156A TO-220 PowerTrench® Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 30V 19A (Ta), 156A (Tc) 4.1 mOhm @ 35A, 10V 2.5V @ 250µA 132nC @ 10V 5200pF @ 15V 4.5V, 10V ±20V
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