Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTR200N10P
Per Unit
$6.01
RFQ
65,260
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 100V 120A ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 300W (Tc) N-Channel - 100V 120A (Tc) 8 mOhm @ 60A, 10V 5V @ 500µA 235nC @ 10V 7600pF @ 25V 10V ±20V
IXFR230N20T
Per Unit
$9.20
RFQ
45,980
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 200V 156A ISOPLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 600W (Tc) N-Channel - 200V 156A (Tc) 8 mOhm @ 60A, 10V 5V @ 8mA 378nC @ 10V 28000pF @ 25V 10V ±20V
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