3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH1R204PL,L1Q
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RFQ
33,600
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 132W (Tc) N-Channel - 40V 150A (Tc) 1.24 mOhm @ 50A, 10V 2.4V @ 500µA 74nC @ 10V 7200pF @ 20V 4.5V, 10V ±20V
TPH1R204PL,L1Q
Per Unit
$0.81
RFQ
30,800
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 132W (Tc) N-Channel - 40V 150A (Tc) 1.24 mOhm @ 50A, 10V 2.4V @ 500µA 74nC @ 10V 7200pF @ 20V 4.5V, 10V ±20V
TPH1R204PL,L1Q
Per Unit
$0.30
RFQ
17,060
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 132W (Tc) N-Channel - 40V 150A (Tc) 1.24 mOhm @ 50A, 10V 2.4V @ 500µA 74nC @ 10V 7200pF @ 20V 4.5V, 10V ±20V
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