Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BUK9907-55ATE,127
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RFQ
22,560
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NXP USA Inc. MOSFET N-CH 55V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-5 TO-220-5 272W (Tc) N-Channel Temperature Sensing Diode 55V 75A (Tc) 6.2 mOhm @ 50A, 10V 2V @ 1mA 108nC @ 5V 5836pF @ 25V 4.5V, 10V ±15V
IPUH6N03LA G
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RFQ
31,000
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Infineon Technologies MOSFET N-CH 25V 50A IPAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 71W (Tc) N-Channel - 25V 50A (Tc) 6.2 mOhm @ 50A, 10V 2V @ 30µA 19nC @ 5V 2390pF @ 15V 4.5V, 10V ±20V
IPSH6N03LA G
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RFQ
79,240
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Infineon Technologies MOSFET N-CH 25V 50A IPAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 71W (Tc) N-Channel - 25V 50A (Tc) 6.2 mOhm @ 50A, 10V 2V @ 30µA 19nC @ 5V 2390pF @ 15V 4.5V, 10V ±20V
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