3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI7454CDP-T1-GE3
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RFQ
79,220
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Vishay Siliconix MOSFET N-CH 100V 22A PPAK SO-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 4.1W (Ta), 29.7W (Tc) N-Channel - 100V 22A (Tc) 30.5 mOhm @ 10A, 10V 2.8V @ 250µA 19.5nC @ 10V 580pF @ 50V 4.5V, 10V ±20V
SI7454CDP-T1-GE3
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RFQ
24,520
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Vishay Siliconix MOSFET N-CH 100V 22A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 4.1W (Ta), 29.7W (Tc) N-Channel - 100V 22A (Tc) 30.5 mOhm @ 10A, 10V 2.8V @ 250µA 19.5nC @ 10V 580pF @ 50V 4.5V, 10V ±20V
SI7454CDP-T1-GE3
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RFQ
54,160
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Vishay Siliconix MOSFET N-CH 100V 22A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 4.1W (Ta), 29.7W (Tc) N-Channel - 100V 22A (Tc) 30.5 mOhm @ 10A, 10V 2.8V @ 250µA 19.5nC @ 10V 580pF @ 50V 4.5V, 10V ±20V
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