Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
79,140
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ON Semiconductor MOSFET N-CH 400V 10A I2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.13W (Ta), 134W (Tc) N-Channel 400V 10A (Tc) 540 mOhm @ 5A, 10V 4V @ 250µA 53nC @ 10V 1800pF @ 25V 10V ±30V
IRF740B
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RFQ
23,620
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ON Semiconductor MOSFET N-CH 400V 10A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 134W (Tc) N-Channel 400V 10A (Tc) 540 mOhm @ 5A, 10V 4V @ 250µA 53nC @ 10V 1800pF @ 25V 10V ±30V
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